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  ? semiconductor components industries, llc, 2002 april, 2002 rev. 2 1 publication order number: mbra210et3/d mbra210et3 surface mount schottky power rectifier sma power surface mount package . . . employing the schottky barrier principle in a metaltosilicon power rectifier. features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. typical applications are ac/dc and dcdc converters, reverse battery protection, and aoringo of multiple supply voltages and any other application where performance and size are critical. ? low i r , extends battery life ? 1st in the market place with a 10 v r schottky rectifier ? compact package with jbend leads ideal for automated handling ? highly stable oxide passivated junction ? guardring for overvoltage protection ? optimized for low leakage current mechanical characteristics: ? case: molded epoxy ? epoxy meets ul94, v o at 1/8 ? weight: 70 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? polarity: polarity band indicates cathode lead ? esd ratings: machine model = c esd ratings: human body model = 3b ? available in 12 mm tape, 5000 units per 13 inch reel maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 10 v average rectified forward current (at rated v r , t c = 125 c) i o 2.0 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 150 a storage/operating case temperature t stg , t c 65 to +150 c operating junction temperature t j 65 to +150 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/  s device package shipping ordering information mbra210et3 sma 5000/tape & reel schottky barrier rectifier 2 amperes 10 volts sma case 403d plastic marking diagram b2e1 = device code b2e1 http://onsemi.com
mbra210et3 http://onsemi.com 2 thermal characteristics characteristic symbol min pad 1 inch pad unit thermal resistance junctiontolead (note 1) thermal resistance junctiontoambient (note 1) r q jl r q ja 22 150 15 81 c/w electrical characteristics maximum instantaneous forward voltage (note 2) v f t j = 25 c t j = 100 c v (i f = 0.1 a) (i f = 1.0 a) (i f = 2.0 a) 0.405 0.480 0.500 0.275 0.355 0.385 maximum instantaneous reverse current i r t j = 25 c t j = 100 c  a (v r = 10 v) (v r = 5.0 v) 15 50 200 500 1. mounted on a 3 square fr4 pc board with min. pads or 1 square copper heat spreader. 2. pulse test: pulse width 250 m s, duty cycle 2%. figure 1. typical forward voltage 0.1 0.3 0.4 0.7 0.2 0.5 100 0.1 1 i f , instantaneous forward current (amps) v f , instantaneous forward voltage (volts) figure 2. maximum forward voltage v f , maximum instantaneous forward voltage (volts) i f , maximum instantaneous forward current (amps) figure 3. typical reverse current 2610 04 8 i r , reverse current (amps) v r , reverse voltage (volts) 100 c 25 c 1.00e03 100 c 75 c 25 c 0.6 10 125 c 75 c 40 c 0.1 0.3 0.4 0.7 0.2 0.5 100 0.1 1 100 c 25 c 0.6 10 125 c 1.00e07 1.00e05 1.00e04 1.00e06 125 c
mbra210et3 http://onsemi.com 3 figure 4. current derating junction to lead 110 130 140 160 120 150 0 3.5 i f , average forward current (amps) t l , lead temperature ( c) figure 5. forward power dissipation 3.0 0 2.0 3.5 0 0.6 i o , average forward current (amps) p fo , average power dissipation (watts) figure 6. typical capacitance 2610 04 8 10,000 100 c, capacitance (pf) v r , reverse voltage (volts) figure 7. thermal response, junction to ambient (min pad) 1000 0.5 1.0 2.0 3.0 square wave dc 0.2 0.4 1.0 0.8 square wave dc t, time (s) 0.0001 0.001 0.1 0.00001 0.01 1 10 100 1000 r (t) , transient thermal resistance ( c/w) 0.1 1 10 100 d = 0.5 0.2 0.1 single pulse 0.05 0.02 0.01 1.4 1.2 1.5 2.5 2.5 1.5 0.5 1.0
mbra210et3 http://onsemi.com 4 figure 8. thermal response, junction to ambient (1 inch pad) t, time (s) 0.0001 0.001 0.1 0.00001 0.01 1 10 100 1000 r (t) , transient thermal resistance ( c/w) 0.1 1 10 100 d = 0.5 0.2 0.1 single pulse 0.05 0.02 0.01
mbra210et3 http://onsemi.com 5 package dimensions sma case 403d02 issue a sma footprint mm inches 0.157 4.0 0.0787 2.0 0.0787 2.0 s a db k j c h dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.090 0.115 2.29 2.92 c 0.075 0.095 1.91 2.41 d 0.050 0.064 1.27 1.63 h 0.002 0.006 0.05 0.15 j 0.006 0.016 0.15 0.41 k 0.030 0.060 0.76 1.52 s 0.190 0.220 4.83 5.59 polarity indicator optional as needed notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 403d-01 obsolete, new standard is 403d-02.
mbra210et3 http://onsemi.com 6 notes
mbra210et3 http://onsemi.com 7 notes
mbra210et3 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbra210et3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada


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